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2SC5508 数据表 (PDF) - NEC
2SC5508 Datasheet PDF - NEC
部件名 2SC5508
下载  2SC5508 下载
文件大小   106.78 Kbytes
页   16 Pages
制造商  NEC [NEC]
网页  http://www.nec.com/
标志 NEC - NEC
功能描述 NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD

2SC5508 Datasheet (PDF)

Go To PDF Page 下载 数据表
2SC5508 Datasheet PDF - NEC

部件名 2SC5508
下载  2SC5508 Click to download

文件大小   106.78 Kbytes
页   16 Pages
制造商  NEC [NEC]
网页  http://www.nec.com/
标志 NEC - NEC
功能描述 NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD

2SC5508 数据表 (HTML) - NEC


2SC5508 产品详情

NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD

FEATURES
• Ideal for low-noise, high-gain amplification applications
• NF = 1.1 dB, Ga= 16 dB TYP. @f = 2 GHz, VCE= 2 V, IC= 5 mA
• Maximum available power gain: MAG = 19 dB TYP. @f = 2 GHz, VCE= 2 V, IC= 20 mA
• fT= 25 GHz technology
• Flat-lead 4-pin thin super mini-mold (t = 0.59 mm)




类似零件编号 - 2SC5508

制造商部件名数据表功能描述
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Renesas Technology Corp		 2SC5508 RENESAS-2SC5508 Datasheet
229Kb / 10P		 NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION
2SC5508-A RENESAS-2SC5508-A Datasheet
229Kb / 10P		 NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION
2SC5508-T2 RENESAS-2SC5508-T2 Datasheet
229Kb / 10P		 NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION
2SC5508-T2-A RENESAS-2SC5508-T2-A Datasheet
229Kb / 10P		 NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION
2SC5508-T2B RENESAS-2SC5508-T2B Datasheet
229Kb / 10P		 NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION
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类似说明 - 2SC5508

制造商部件名数据表功能描述
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NEC		 2SC5178 NEC-2SC5178 Datasheet
82Kb / 12P		 NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
2SC5183 NEC-2SC5183 Datasheet
60Kb / 12P		 NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
2SC5436 NEC-2SC5436 Datasheet
77Kb / 12P		 NPN EPITAXIAL SILICON TRANSISTOR ULTRA SUPER MINI MOLD FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
2SC5507 NEC-2SC5507 Datasheet
91Kb / 12P		 NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD
2SC5606 NEC-2SC5606 Datasheet
68Kb / 6P		 NPN SILICON RF TRANSISTOR FOR LOW NOISE 쨌 HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD
NE661M04 NEC-NE661M04 Datasheet
70Kb / 7P		 NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD
2SC5761 NEC-2SC5761 Datasheet
81Kb / 14P		 NPN SiGe RF TRANSISTOR FOR LOW NOISE & HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)
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California Eastern Labs		 NESG3031M05-T1-A CEL-NESG3031M05-T1-A Datasheet
673Kb / 9P		 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05, 2012 PKG)
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Renesas Technology Corp		 2SC5508 RENESAS-2SC5508 Datasheet
229Kb / 10P		 NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION
2SC5606 RENESAS-2SC5606 Datasheet
201Kb / 9P		 NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION
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关于 NEC

NEC Corporation是一家日本跨国信息技术和电子公司。该公司成立于1899年，总部位于日本东京。 NEC提供广泛的产品和服务，包括信息技术，电信和电子产品。它的投资组合包括计算机硬件，软件和服务，网络解决方案，显示解决方案以及企业服务器和存储解决方案。

NEC以其在信息技术领域的专业知识及其提供创新和高质量产品和服务的能力而闻名。该公司在世界各地拥有运营和设施，并在亚太地区拥有强大的业务。 NEC与客户紧密合作，提供满足其特定要求和需求的自定义解决方案。

除了其核心业务外，NEC还活跃于研发领域，并参与了与高级技术有关的各种项目，例如人工智能，5G网络和物联网（IoT）。 NEC致力于提供可持续的解决方案，以支持社会发展并改善世界各地人们的生活质量。

*此信息仅供一般参考，对于因上述信息造成的任何损失或损害，我们概不负责。




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