AXIAL LEAD RECTIFIERS

. . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial consr"jction with oxide passivation and metal overlap contact.
Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes, and polarity protection diodes.

• Extremely Low VF
• Low Stored Charge, Majority Carrier Conduction
• Low Power Loss/High Efficiency