Description
These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits.

● Low RDS(on)
● VGS Rated at ±20 V
● Silicon Gate for Fast Switching Speeds
● IDSS. VDS(on), Specified at Elevated Temperature
● Rugged
● Low Drive Requirements
● Ease of Paralleling