The 2N6763 and2N6764 are n-channelenhancement-mode silicon-gate power MOS field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay driver;:, and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive power. These types can be operated directly from integrated circuits.

Features:
• SOA ispower-dissipation limited
• Nanosecond switching speeds
• Linear transfer characteristics
• High input Impedance
• Majority carrier device