The RF TMOS Line RF Power Field-EffectTransistors N-Channel Enhancement-Mode TMOS

. . . designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push–pull configuration.

• Guaranteed 28 Volt, 150 MHz Performance
    MRF136                                          MRF136Y
    Output Power = 15 Watts               Output Power = 30 Watts
    Narrowband Gain = 16 dB (Typ)    Broadband Gain = 14 dB (Typ)
    Efficiency = 60% (Typical)              Efficiency = 54% (Typical)

• Small–Signal and Large–Signal Characterization
• 100% Tested For Load Mismatch At All Phase Angles With 30:1 VSWR
• Space Saving Package For Push–Pull Circuit Applications — MRF136Y
• Excellent Thermal Stability, Ideally Suited For Class A Operation
• Facilitates Manual Gain Control, ALC and Modulation Techniques