DESCRIPTION
The NE960R2 Series are 0.2 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems. It is capable of delivering 0.2 watt of output power (CW) with high linear gain, high efficiency and low distortion and are suitable as driver amplifiers for our X, Ku-band NEZ Series amplifiers etc. The NE961R200 and the NE960R200 are available in chip form. The NE960R200 has a via hole source grounding and PHS (Plated Heat Sink) for superior RF performance. The NE960R275 is available in a hermetically sealed ceramic package. Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.

FEATURES
• High Output Power : Po (1 dB) = +25.0 dBm TYP.
• High Linear Gain : 10.0 dB TYP.
• High Power Added Efficiency: 35 % TYP. @VDS = 9 V, IDset = 90 mA, f = 14.5 GHz