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FSS230D 数据表 (PDF) - Intersil Corporation

FSS230D Datasheet PDF - Intersil Corporation
部件名 FSS230D
下载  FSS230D 下载

文件大小   46.46 Kbytes
  8 Pages
制造商  INTERSIL [Intersil Corporation]
网页  http://www.intersil.com/cda/home
标志 INTERSIL - Intersil Corporation
功能描述 8A, 200V, 0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

FSS230D Datasheet (PDF)

Go To PDF Page 下载 数据表
FSS230D Datasheet PDF - Intersil Corporation

部件名 FSS230D
下载  FSS230D Click to download

文件大小   46.46 Kbytes
  8 Pages
制造商  INTERSIL [Intersil Corporation]
网页  http://www.intersil.com/cda/home
标志 INTERSIL - Intersil Corporation
功能描述 8A, 200V, 0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

FSS230D 数据表 (HTML) - Intersil Corporation

FSS230D Datasheet HTML 1Page - Intersil Corporation FSS230D Datasheet HTML 2Page - Intersil Corporation FSS230D Datasheet HTML 3Page - Intersil Corporation FSS230D Datasheet HTML 4Page - Intersil Corporation FSS230D Datasheet HTML 5Page - Intersil Corporation FSS230D Datasheet HTML 6Page - Intersil Corporation FSS230D Datasheet HTML 7Page - Intersil Corporation FSS230D Datasheet HTML 8Page - Intersil Corporation

FSS230D 产品详情

Description
The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed.

Features
• 8A, 200V, rDS(ON) = 0.440Ω
• Total Dose
    - Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
    - Safe Operating Area Curve for Single Event Effects
    - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias
• Dose Rate
    - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
    - Typically Survives 2E12 if Current Limited to IDM
• Photo Current
    - 3.0nA Per-RAD(Si)/s Typically
• Neutron
    - Maintain Pre-RAD Specifications for 1E13 Neutrons/cm2
    - Usable to 1E14 Neutrons/cm2




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关于 Intersil Corporation


Intersil Corporation是一家美国半导体公司,专门从事高性能模拟和混合信号综合电路的设计和制造。
该公司成立于1967年,以其电力管理,数据转换和射频(RF)技术方面的专业知识而闻名。
Intersil的产品用于广泛的应用,例如消费电子,工业,电信以及航空航天和防御。
2016年,Intersil被日本半导体公司Renesas Electronics Corporation收购。
作为Renesas产品组合的一部分,Intersil品牌和技术继续被开发和出售。

*此信息仅供一般参考,对于因上述信息造成的任何损失或损害,我们概不负责。




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