HGTP10N40F1D 数据表(PDF) - Intersil Corporation

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HGTP10N40F1D 数据表 (PDF) - Intersil Corporation

HGTP10N40F1D Datasheet PDF - Intersil Corporation


部件名	HGTP10N40F1D

下载	HGTP10N40F1D 下载

文件大小	34.04 Kbytes

页	5 Pages

制造商	INTERSIL [Intersil Corporation]

网页	http://www.intersil.com/cda/home

标志

功能描述	10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes

HGTP10N40F1D Datasheet (PDF)

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HGTP10N40F1D Datasheet PDF - Intersil Corporation


部件名	HGTP10N40F1D

下载	HGTP10N40F1D Click to download

文件大小	34.04 Kbytes

页	5 Pages

制造商	INTERSIL [Intersil Corporation]

网页	http://www.intersil.com/cda/home

标志

功能描述	10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes

HGTP10N40F1D 数据表 (HTML) - Intersil Corporation

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HGTP10N40F1D Datasheet HTML 4Page - Intersil Corporation

HGTP10N40F1D Datasheet HTML 5Page - Intersil Corporation

HGTP10N40F1D 产品详情

Description

The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25℃ and +150℃. The diode used in parallel with the IGBT is an ultrafast (tRR < 60ns) with soft recovery characteristic.

Features

• 10A, 400V and 500V

• Latch Free Operation

• Typical Fall Time < 1.4µs

• High Input Impedance

• Low Conduction Loss

• Anti-Parallel Diode

• tRR < 60ns

类似零件编号 - HGTP10N40F1D

制造商	部件名	数据表	功能描述
Intersil Corporation	HGTP10N40C1	38Kb / 7P	10A, 12A, 400V and 500V N-Channel IGBTs April 1995
	HGTP10N40C1D	37Kb / 6P	10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995
	HGTP10N40E1	38Kb / 7P	10A, 12A, 400V and 500V N-Channel IGBTs April 1995
	HGTP10N40E1D	37Kb / 6P	10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995

类似说明 - HGTP10N40F1D

制造商	部件名	数据表	功能描述
Intersil Corporation	2N6975	40Kb / 4P	5A, 400V and 500V N-Channel IGBTs April 1995
	HGTD10N40F1	33Kb / 4P	10A, 400V and 500V N-Channel IGBTs March 1997
	HGTD6N40E1	32Kb / 4P	6A, 400V and 500V N-Channel IGBTs March 1997
	HGTG20N50C1D	33Kb / 5P	20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995
	HGTG5N120BND	89Kb / 7P	21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes January 2000
	HGTH20N40C1D	35Kb / 6P	20A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995
	HGTP10N40C1	38Kb / 7P	10A, 12A, 400V and 500V N-Channel IGBTs April 1995
	HGTP10N40C1D	37Kb / 6P	10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995
	HGTP15N40C1	35Kb / 5P	15A, 20A, 400V and 500V N-Channel IGBTs April 1995
	HGTP2N120CND	92Kb / 7P	13A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes January 2000

关于 Intersil Corporation

Intersil Corporation是一家美国半导体公司，专门从事高性能模拟和混合信号综合电路的设计和制造。
该公司成立于1967年，以其电力管理，数据转换和射频（RF）技术方面的专业知识而闻名。
Intersil的产品用于广泛的应用，例如消费电子，工业，电信以及航空航天和防御。
2016年，Intersil被日本半导体公司Renesas Electronics Corporation收购。
作为Renesas产品组合的一部分，Intersil品牌和技术继续被开发和出售。

*此信息仅供一般参考，对于因上述信息造成的任何损失或损害，我们概不负责。

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