Features
● For general purpose applications
● This diode features low turn-on voltage.
   The devices are protected by a PN junction
   guard ring against excessive voltage, such
   as electrostatic discharges.
● Metal-on-silicon Schottky barrier device which is
   protected by a PN junction guard ring.
● The low forward voltage drop and fast switching
   make it ideal for protection of MOS devices, steer
   ing, biasing and coupling diodes for fast switching
   and low logic level applications
● Lead (Pb)-free component
● Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC