The RF MOSFET Line
Power Field Effect Transistor
N–Channel Enhancement-Mode MOSFET

Designed primarily for wideband large–signal output and driver from 30–500 MHz.

• Guaranteed 28 Volt, 500 MHz performance
    Output power = 4.0 Watts
    Gain = 16 dB (Min)
    Efficiency = 55% (Typ)
• Excellent thermal stability, ideally suited for Class A operation
• Facilitates manual gain control, ALC and modulation techniques
• 100% Tested for load mismatch at all phase angles with 30:1 VSWR
• Low Crss – 0.8 pF Typical at VDS = 28 Volts