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HIP6601BCBZ 数据表 (PDF) - Intersil Corporation

HIP6601BCBZ Datasheet PDF - Intersil Corporation
部件名 HIP6601BCBZ
下载  HIP6601BCBZ 下载
文件大小   258.03 Kbytes
  12 Pages
制造商  INTERSIL [Intersil Corporation]
网页  http://www.intersil.com/cda/home
标志 INTERSIL - Intersil Corporation
功能描述 Synchronous Rectified Buck MOSFET Drivers

HIP6601BCBZ Datasheet (PDF)

Go To PDF Page 下载 数据表
HIP6601BCBZ Datasheet PDF - Intersil Corporation

部件名 HIP6601BCBZ
下载  HIP6601BCBZ Click to download

文件大小   258.03 Kbytes
  12 Pages
制造商  INTERSIL [Intersil Corporation]
网页  http://www.intersil.com/cda/home
标志 INTERSIL - Intersil Corporation
功能描述 Synchronous Rectified Buck MOSFET Drivers

HIP6601BCBZ 数据表 (HTML) - Intersil Corporation


HIP6601BCBZ 产品详情

The HIP6601B, HIP6603B and HIP6604B are high-frequency,
dual MOSFET drivers specifically designed to drive two power
N-Channel MOSFETs in a synchronous rectified buck converter
topology. These drivers combined with a HIP63xx or the ISL65xx
series of Multi-Phase Buck PWM controllers and MOSFETs form
a complete core-voltage regulator solution for advanced
microprocessors.
The HIP6601B drives the lower gate in a synchronous rectifier to
12V, while the upper gate can be independently driven over a range
from 5V to 12V. The HIP6603B drives both upper and lower gates
over a range of 5V to 12V. This drive-voltage flexibility provides
the advantage of optimizing applications involving trade-offs
between switching losses and conduction losses. The HIP6604B
can be configured as either a HIP6601B or a HIP6603B.
The output drivers in the HIP6601B, HIP6603B and HIP6604B
have the capacity to efficiently switch power MOSFETs at
frequencies up to 2MHz. Each driver is capable of driving a
3000pF load with a 30ns propagation delay and 50ns transition
time. These products implement bootstrapping on the upper gate
with only an external capacitor required. This reduces
implementation complexity and allows the use of higher
performance, cost effective, N-Channel MOSFETs. Adaptive
shoot-through protection is integrated to prevent both MOSFETs
from conducting simultaneously.

Features
• Drives Two N-Channel MOSFETs
• Adaptive Shoot-Through Protection
• Internal Bootstrap Device
• Supports High Switching Frequency
- Fast Output Rise Time
- Propagation Delay 30ns
• Small 8 Ld SOIC and EPSOIC and 16 Ld QFN Packages
• Dual Gate-Drive Voltages for Optimal Efficiency
• Three-State Input for Output Stage Shutdown
• Supply Undervoltage Protection
• QFN Package
- Compliant to JEDEC PUB95 MO-220 QFN—Quad Flat No
Leads—Product Outline.
- Near Chip-Scale Package Footprint; Improves PCB
Efficiency and Thinner in Profile.
• Pb-Free (RoHS Compliant)

Applications
• Core Voltage Supplies for Intel Pentium® III, AMD® Athlon™
Microprocessors
• High Frequency Low Profile DC/DC Converters
• High Current Low Voltage DC/DC Converters




类似零件编号 - HIP6601BCBZ

制造商部件名数据表功能描述
logo
Intersil Corporation
HIP6601BCBZ INTERSIL-HIP6601BCBZ Datasheet
261Kb / 12P
Synchronous Rectified Buck MOSFET Drivers
HIP6601BCBZ INTERSIL-HIP6601BCBZ Datasheet
256Kb / 12P
Drives Two N-Channel MOSFETs
May 1, 2012
logo
Renesas Technology Corp
HIP6601BCBZ RENESAS-HIP6601BCBZ Datasheet
682Kb / 14P
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Intersil Corporation
HIP6601BCBZA INTERSIL-HIP6601BCBZA Datasheet
261Kb / 12P
Synchronous Rectified Buck MOSFET Drivers
HIP6601BCBZA INTERSIL-HIP6601BCBZA Datasheet
256Kb / 12P
Drives Two N-Channel MOSFETs
May 1, 2012
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类似说明 - HIP6601BCBZ

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Renesas Technology Corp
ISL6625A RENESAS-ISL6625A Datasheet
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关于 Intersil Corporation


Intersil Corporation是一家美国半导体公司,专门从事高性能模拟和混合信号综合电路的设计和制造。
该公司成立于1967年,以其电力管理,数据转换和射频(RF)技术方面的专业知识而闻名。
Intersil的产品用于广泛的应用,例如消费电子,工业,电信以及航空航天和防御。
2016年,Intersil被日本半导体公司Renesas Electronics Corporation收购。
作为Renesas产品组合的一部分,Intersil品牌和技术继续被开发和出售。

*此信息仅供一般参考,对于因上述信息造成的任何损失或损害,我们概不负责。




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