DESCRIPTION:
The MS2213 device is a high power Class C transistor specifically designed for JTIDS pulsed output and driver applications.
The device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and is capable of withstanding 15:1 output VSWR at rated RF conditions.
Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency.
The MS2213 is supplied in the hermetic metal/ceramic package with internal input matching structures.

Features
•  REFRACTORY/GOLD METALLIZATION
•  EMITTER SITE BALLASTED
•  15:1 VSWR CAPABILITY
•  LOW RF THERMAL RESISTANCE
•  INPUT/OUTPUT MATCHING
•  OVERLAY GEOMETRY
•  METAL/CERAMIC HERMETIC PACKAGE
•  POUT = 30 W MIN. WITH 7.8 dB Gain