| 制造商 | 部件名 | 数据表 | 功能描述 |
 Motorola, Inc |
BS170
|
77Kb / 4P |
TMOS FET Switching(N-Channel-Enhancement)
|
|
BSS123LT1
|
93Kb / 4P |
TMOS FET Transistor(N-Channel)
|
|
MMFT108T1
|
91Kb / 6P |
TMOS FET TRANSISTOR N-CHANNEL - ENHANCEMENT
|
 Seme LAB |
2N6796
|
18Kb / 2P |
TMOS FET TRANSISTOR N - CHANNEL
|
 Motorola, Inc |
MTW8N50E
|
70Kb / 2P |
TMOS E FET POWER FIELD EFFECT TRANSISTOR
|
|
MTW4N80
|
70Kb / 2P |
TMOS E-FET POWER FIELD EFFECT TRANSISITOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE
|
|
MTH8N50E
|
631Kb / 6P |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
|
|
MTW10N40E
|
70Kb / 2P |
TMOS E-FET POWER FIELD EFFECT TRANSISTOR
|
 Seme LAB |
2N6796
|
22Kb / 2P |
TMOS FET ENHANCEMENT N - CHANNEL
|
 Motorola, Inc |
VN2410LG
|
61Kb / 4P |
TMOS FET Transistor N-Channel - Enhancement
|