PTF181301A 数据表(PDF) - Infineon Technologies AG

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PTF181301A 数据表 (PDF) - Infineon Technologies AG

PTF181301A Datasheet PDF - Infineon Technologies AG


部件名	PTF181301A

下载	PTF181301A 下载

文件大小	66.39 Kbytes

页	4 Pages

制造商	INFINEON [Infineon Technologies AG]

网页	http://www.infineon.com

标志

功能描述	LDMOS RF Power Field Effect Transistor 130 W, 1805-1880 MHz

PTF181301A Datasheet (PDF)

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PTF181301A Datasheet PDF - Infineon Technologies AG


部件名	PTF181301A

下载	PTF181301A Click to download

文件大小	66.39 Kbytes

页	4 Pages

制造商	INFINEON [Infineon Technologies AG]

网页	http://www.infineon.com

标志

功能描述	LDMOS RF Power Field Effect Transistor 130 W, 1805-1880 MHz

PTF181301A 数据表 (HTML) - Infineon Technologies AG

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PTF181301A 产品详情

Description
The PTF181301 is a 130 W, internally matched GOLDMOS FET intended for GSM and EDGE applications in the 1805 to 1880 MHz band. Full gold metallization ensures excellent device lifetime and reliability.

Features
• Broadband internal matching
• Typical EDGE performance
- Average output power = 55 W
- Gain = 15.5 dB
- Efficiency = 32%
- EVM = 1.7%
• Typical CW performance
- Output power at P–1dB = 150 W
- Gain = 14.5 dB
- Efficiency = 47%
• Integrated ESD protection: Human Body
Model, Class 1 (minimum)
• Excellent thermal stability
• Low HCI drift
• Capable of handling 10:1 VSWR @ 28 V,
130 W (CW) output power

类似零件编号 - PTF181301A

制造商	部件名	数据表	功能描述
Infineon Technologies A...	PTF180101	310Kb / 10P	LDMOS RF Power Field Effect Transistor 10 W, 1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz 2004-02-03
	PTF180101M	314Kb / 8P	High Power RF LDMOS Field Effect Transistor 10 W, 1.0 ??2.0 GHz Rev. 05.1, 2009-02-18
	PTF180101S	310Kb / 10P	LDMOS RF Power Field Effect Transistor 10 W, 1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz 2004-02-03
	PTF180101S	209Kb / 10P	LDMOS RF Power Field Effect Transistor 10 W, 1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz Rev. P03, 2007-03-01
	PTF180601	233Kb / 11P	LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805-1880 MHz, 1930-1990 MHz 2004-05-03

类似说明 - PTF181301A

制造商	部件名	数据表	功能描述
Infineon Technologies A...	PTF180101	310Kb / 10P	LDMOS RF Power Field Effect Transistor 10 W, 1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz 2004-02-03
	PTF180601	233Kb / 11P	LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805-1880 MHz, 1930-1990 MHz 2004-05-03
	PTF211301	449Kb / 9P	LDMOS RF Power Field Effect Transistor 130 W, 2110-2170 MHz 2004-01-02
TriQuint Semiconductor	AGR18060E	426Kb / 9P	60 W, 1805 MHz-1880 MHz, LDMOS RF Power Transistor
Infineon Technologies A...	PTFA181001E	408Kb / 11P	Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 ??1880 MHz Rev. 02.1, 2009-02-20
	PTF180101S	209Kb / 10P	LDMOS RF Power Field Effect Transistor 10 W, 1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz Rev. P03, 2007-03-01
	PTFA182001E	260Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 200 W, 1805 - 1880 MHz Rev. 01, 2008-03-12
	PTFB183404E	727Kb / 18P	High Power RF LDMOS Field Effect Transistors 340 W, 1805 ??1880 MHz Rev. 04, 2010-11-17
	PTFB183404E	911Kb / 18P	High Power RF LDMOS Field Effect Transistors 340 W, 1805 ??1880 MHz Rev. 04.1, 2016-06-10
Cree, Inc	PTFB183404E	649Kb / 18P	High Power RF LDMOS Field Effect Transistors 340 W, 1805 ??1880 MHz

关于 Infineon Technologies AG

Infineon Technologies是一家领先的全球半导体制造商，专门为汽车，工业和通信系统等各种行业提供电力管理，安全和控制解决方案。
该公司成立于1999年，总部位于德国Neubiberg。
Infineon提供各种产品，包括微控制器，功率半导体，传感器和其他集成电路。
该公司在全球市场拥有强大的业务，在世界各地拥有运营和设施。

*此信息仅供一般参考，对于因上述信息造成的任何损失或损害，我们概不负责。

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