Description
The 4N25, 4N26, 4N27, 4N28, 4N35, 4N36, 4N37, 4N38, H11A1, H11A2, H11A3, H11A4, H11A5 series consists of a photo transistor optically coupled to a gallium arsenide Infrared-emitting diode in a 6-lead DIP package different lead forming options.

Features
• High isolation 5000 VRMS
• CTR flexibility available see order information
• DC input with transistor output
• Operating temperature range - 55 °C to 110 °C
• Regulatory Approvals
   ■ UL - UL1577 (E364000)
   ■ VDE - EN60747-5-5(VDE0884-5)
   ■ CQC – GB4943.1, GB8898
   ■ IEC60065, IEC60950

Applications
• Switch mode power supplies
• Computer peripheral interface
• Microprocessor system interface