512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology

General Description

The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 512 Mbit, organized as 33,554,432 words or 67,108,864 bytes. The S29GL256N is a 256 Mbit, organized as 16,777,216 words or 33,554,432 bytes. The S29GL128N is a 128 Mbit, organized as 8,388,608 words or 16,777,216 bytes. The devices have a 16-bit wide data bus that can also function as an 8-bit wide data bus by using the BYTE# input. The device can be programmed either in the host system or in standard EPROM programmers.

Distinctive Characteristics

Architectural Advantages

■ Single power supply operation

   — 3 volt read, erase, and program operations

■ Enhanced VersatileI/O™ control

   — All input levels (address, control, and DQ input levels) and outputs are determined by voltage on VIO input. VIO range is 1.65 to VCC

■ Manufactured on 110 nm MirrorBit process technology

■ Secured Silicon Sector region

   — 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number, accessible through a command sequence

   — May be programmed and locked at the factory or by the customer

■ Flexible sector architecture

   — S29GL512N: Five hundred twelve 64 Kword (128 Kbyte) sectors

   — S29GL256N: Two hundred fifty-six 64 Kword (128 Kbyte) sectors

   — S29GL128N: One hundred twenty-eight 64 Kword (128 Kbyte) sectors

■ Compatibility with JEDEC standards

   — Provides pinout and software compatibility for single-power supply flash, and superior inadvertent write protection

■ 100,000 erase cycles per sector typical

■ 20-year data retention typical

Performance Characteristics

■ High performance

   — 90 ns access time (S29GL128N, S29GL256N)

   — 100 ns (S29GL512N)

   — 8-word/16-byte page read buffer

   — 25 ns page read times

   — 16-word/32-byte write buffer reduces overall programming time for multiple-word updates

■ Low power consumption (typical values at 3.0 V, 5 MHz)

   — 25 mA typical active read current;

   — 50 mA typical erase/program current

   — 1 µA typical standby mode current

■ Package options

   — 56-pin TSOP

   — 64-ball Fortified BGA

Software & Hardware Features

■ Software features

   — Program Suspend and Resume: read other sectors before programming operation is completed

   — Erase Suspend and Resume: read/program other sectors before an erase operation is completed

   — Data# polling and toggle bits provide status

   — Unlock Bypass Program command reduces overall multiple-word programming time

   — CFI (Common Flash Interface) compliant: allows host system to identify and accommodate multiple flash devices

■ Hardware features

   — Advanced Sector Protection

   — WP#/ACC input accelerates programming time (when high voltage is applied) for greater throughput during system production. Protects first or last sector regardless of sector protection settings

   — Hardware reset input (RESET#) resets device

   — Ready/Busy# output (RY/BY#) detects program or erase cycle completion