VDSS = -55V

RDS(on) = 0.105Ω

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Generation V Technology

Ultra Low On-Resistance

Dual P-Channel Mosfet

Surface Mount

Available in Tape & Reel

Dynamic dv/dt Rating

Fast Switching