The TOSHIBA TLP722 consists of a photo−diode optically coupled to a gallium arsenide infrared emitting diode in a four lead plastic DIP (DIP4). TLP722: Single circuit • Cathode−anode voltage: 30V (max) • Current transfer ratio: 0.1% (min) • Input / output isolation voltage: 4000Vrms (min) • Operating temperature range: −55~100°C • Storage temperature range: −55~125°C • UL recognized: UL1577, E67349 • VDE approved: EN60747-5-2 Maximum operating insulation voltage: 890VPK Maximum permissible over voltage: 8000VPK
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