SUMMARY DESCRIPTION

The M28W160EC is a 16 Mbit (1 Mbit x 16) nonvolatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/O pin down to 1.65V. An optional 12V VPP power supply is provided to speed up customer programming.

FEATURES SUMMARY

■ SUPPLY VOLTAGE

   – VDD = 2.7V to 3.6V Core Power Supply

   – VDDQ= 1.65V to 3.6V for Input/Output

   – VPP = 12V for fast Program (optional)

■ ACCESS TIME: 70, 85, 90,100ns

■ PROGRAMMING TIME:

   – 10µs typical

   – Double Word Programming Option

■ COMMON FLASH INTERFACE

   – 64 bit Security Code

■ MEMORY BLOCKS

   – Parameter Blocks (Top or Bottom location)

   – Main Blocks

■ BLOCK LOCKING

   – All blocks locked at Power Up

   – Any combination of blocks can be locked

   – WP for Block Lock-Down

■ SECURITY

   – 64 bit user Programmable OTP cells

   – 64 bit unique device identifier

   – One Parameter Block Permanently Lockable

■ AUTOMATIC STAND-BY MODE

■ PROGRAM and ERASE SUSPEND

■ 100,000 PROGRAM/ERASE CYCLES per BLOCK

■ ELECTRONIC SIGNATURE

   – Manufacturer Code: 20h

   – Top Device Code, M28W160ECT: 88CEh

   – Bottom Device Code, M28W160ECB: 88CFh

■ PACKAGES

   – Compliant with Lead-Free Soldering Processes

   – Lead-Free Versions