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CGHV59070 数据表 (PDF) - Cree, Inc

CGHV59070 Datasheet PDF - Cree, Inc
部件名 CGHV59070
下载  CGHV59070 下载
文件大小   915.52 Kbytes
  10 Pages
制造商  CREE [Cree, Inc]
网页  http://www.cree.com/
标志 CREE - Cree, Inc
功能描述 70 W, 4.4-5.9 GHz, 50 V, RF Power GaN HEMT

CGHV59070 Datasheet (PDF)

Go To PDF Page 下载 数据表
CGHV59070 Datasheet PDF - Cree, Inc

部件名 CGHV59070
下载  CGHV59070 Click to download

文件大小   915.52 Kbytes
  10 Pages
制造商  CREE [Cree, Inc]
网页  http://www.cree.com/
标志 CREE - Cree, Inc
功能描述 70 W, 4.4-5.9 GHz, 50 V, RF Power GaN HEMT

CGHV59070 数据表 (HTML) - Cree, Inc




类似零件编号 - CGHV59070

制造商部件名数据表功能描述
logo
WOLFSPEED, INC.
CGHV59070 WOLFSPEED-CGHV59070 Datasheet
2Mb / 14P
70 W, 4.4 - 5.9 GHz, 50 V, RF Power GaN HEMT
Rev. 2.7, 2022-12-8
More results


类似说明 - CGHV59070

制造商部件名数据表功能描述
logo
Cree, Inc
CGHV1J070D CREE-CGHV1J070D Datasheet
784Kb / 9P
70 W, 18.0 GHz, GaN HEMT Die
Rev 0.5
CGHV40050F CREE-CGHV40050F Datasheet
866Kb / 11P
50 W, DC - 4.0 GHz, 50 V, GaN HEMT
Rev 1.0
CG2H30070F CREE-CG2H30070F Datasheet
1Mb / 13P
70 W, 0.5??.0 GHz, 28 V, RF Power GaN HEMT
CGHV40050 CREE-CGHV40050 Datasheet
2Mb / 11P
50 W, DC - 4.0 GHz, 50 V, GaN HEMT
CMPA5259050S CREE-CMPA5259050S Datasheet
1Mb / 16P
50 W, 5.0 - 5.9 GHz, GaN MMIC, Power Amplifier
logo
WOLFSPEED, INC.
CG2H30070F WOLFSPEED-CG2H30070F Datasheet
1Mb / 13P
70 W, DC - 4.0 GHz, 28 V, RF Power GaN HEMT
Rev 3.1 - April 2020
CGHV1J070D WOLFSPEED-CGHV1J070D Datasheet
982Kb / 10P
70 W, 18.0 GHz, GaN HEMT Die
Rev. 2.0, 2022-7-27
CGHV40050 WOLFSPEED-CGHV40050 Datasheet
2Mb / 11P
50 W, DC - 4.0 GHz, 50 V, GaN HEMT
Rev. 2.4, 2022-12-2
CGHV50200F WOLFSPEED-CGHV50200F Datasheet
1Mb / 15P
200 W, 4.4 - 5.0 GHz, 50-Ohm Input/Output Matched, GaN HEMT
Rev. 3.2, 2022-12-8
CGHV59070 WOLFSPEED-CGHV59070 Datasheet
2Mb / 14P
70 W, 4.4 - 5.9 GHz, 50 V, RF Power GaN HEMT
Rev. 2.7, 2022-12-8
More results




关于 Cree, Inc


Cree, Inc. is an American semiconductor company that specializes in the design and manufacture of wide bandgap semiconductors, including silicon carbide (SiC) and gallium nitride (GaN) devices, as well as LED lighting and power electronics products. The company was founded in 1987 and is headquartered in Durham, North Carolina.

Cree's wide bandgap semiconductors are used in a variety of applications, including power electronics, automotive, aerospace, and defense. The company's SiC and GaN devices are known for their high efficiency, high power density, and high operating temperature, making them ideal for use in applications where high performance is critical.

In addition to its wide bandgap semiconductor products, Cree also offers LED lighting products, including bulbs, fixtures, and chips, that are used in a variety of applications, including residential, commercial, and industrial lighting. Cree's LED lighting products are known for their high quality, energy efficiency, and long lifespan.

Cree has a strong focus on innovation and research and development, and is committed to developing new and innovative products that meet the evolving needs of its customers. The company has a global presence, with offices and facilities located in the United States, Europe, and Asia, and serves customers in more than 100 countries worldwide.

*此信息仅供一般参考,对于因上述信息造成的任何损失或损害,我们概不负责。




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