| 制造商 | 部件名 | 数据表 | 功能描述 |
 Toshiba Semiconductor |
TPC8102
|
471Kb / 7P |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (MOSVI)
|
|
TPC8202
|
339Kb / 7P |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSVI)
|
|
2SK3125
|
226Kb / 6P |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSVI)
|
|
2SK3934
|
75Kb / 6P |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI)
|
|
2SK3561
|
227Kb / 6P |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (MOSVI)
|
|
2SK3562
|
232Kb / 6P |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSVI)
|
|
2SK3567
|
94Kb / 3P |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSVI)
|
|
2SK3569
|
150Kb / 6P |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSVI)
|
|
2SK4106
|
181Kb / 6P |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2009-09-29 |
|
K4110
|
199Kb / 6P |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2009-09-29 |