Lithium Ion Secondary Battery Applications
Portable Equipment Applications
Notebook PCs

● Low drain−source ON resistance
   : P Channel RDS (ON) = 27 mΩ (typ.)
     N Channel RDS (ON) = 14 mΩ (typ.)
● High forward transfer admittance
   : P Channel |Yfs| = 7 S (typ.)
     N Channel |Yfs| = 8 S (typ.)
● Low leakage current
   : P Channel IDSS = −10 µA (VDS = −30 V)
     N Channel IDSS = 10 µA (VDS = 30 V)
● Enhancement−mode
   : P Channel Vth = −0.8~ −2.0 V (VDS = −10 V, ID = −1mA)
     N Channel Vth = 0.8~2.5 V (VDS = 10 V, ID = 1mA)