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EVL6566B-65W-QR 数据表 (PDF) - STMicroelectronics

EVL6566B-65W-QR Datasheet PDF - STMicroelectronics
部件名 EVL6566B-65W-QR
下载  EVL6566B-65W-QR 下载
文件大小   128.98 Kbytes
  5 Pages
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics
功能描述 19 V - 65 W quasi resonant flyback adapter board

EVL6566B-65W-QR Datasheet (PDF)

Go To PDF Page 下载 数据表
EVL6566B-65W-QR Datasheet PDF - STMicroelectronics

部件名 EVL6566B-65W-QR
下载  EVL6566B-65W-QR Click to download

文件大小   128.98 Kbytes
  5 Pages
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics
功能描述 19 V - 65 W quasi resonant flyback adapter board

EVL6566B-65W-QR 数据表 (HTML) - STMicroelectronics


EVL6566B-65W-QR 产品详情

Description
The EVL6566B-65W-QR is a demonstration board tailored on specification of a typical hi-end portable computer power supply. The peculiarities of this design are the very high average efficiency of about 90% without synchronous rectification and very low no load consumption of 100mW at 230 Vac. The result is that this converter is compliant to energy star eligibility criteria. The flyback stage implements the new ST dedicated current mode controller L6566B, operating in quasi-resonant mode and detecting the transformer demagnetization by pin ZCD. The resistor on pin OSC sets the maximum switching frequency at about 165 kHz. Because the maximum switching frequency is imposed, the converter operates in discontinuous conduction mode during light load operation. The L6566B valley skipping function is capable to turn-on the MOSFET in valley switching even in DCM, thus reducing switching losses. The Power MOSFET is a standard 800 V, STF7NM80, housed in TO-220FP package, needing just a small heat sink. The transformer is layer type, using a standard ferrite size EER28L, designed according to the EN60950. The flyback reflected voltage is ~150 V, providing enough room for the leakage inductance voltage spike with good margin for the reliability of the MOSFET. The output rectifiers are two, dual centre tap Schottky diode in parallel, STPS20H100CFP, housed in TO-220FP. They have been selected according to the maximum reverse voltage, forward voltage drop and power dissipation. The snubber damps the oscillation produced by the diode capacitance and the leakage inductance. A small LC filter has been added on the output, filtering the high frequency ripple and spikes. Thanks to the L6566B valley skipping feature it has been possible to dimension the power transformer parameters optimizing efficiency at different loads achieving an outstanding result even without synchronous rectification.

Features
■ Universal input mains range: 90 264 Vac - frequency 45 ÷ 65Hz
■ Output voltage: 19 V @ 3.42 A continuous operation
■ Mains harmonics: according to EN61000-3-2 Class-D or JEITA-MITI Class-D
■ Stand-by mains consumption: <100 mW @ 230 Vac
■ Average efficiency: better than 89% without synchronous rectification
■ EMI: according to EN55022-Class-B
■ Safety: according to EN60950
■ Dimensions: 58x121 mm, 25 mm components maximum height
■ PCB: single side, 35 µm, CEM-1, mixed PTH/SMT




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关于 STMicroelectronics


Stmicroelectronics是位于瑞士日内瓦的跨国电子和半导体制造商。

该公司为汽车,工业和消费者市场的各种应用提供了广泛的产品,包括微控制器,传感器,功率放大器和集成电路。

Stmicroelectronics成立于1987年,在1​​00多个国家 /地区开展业务,是世界上最大的半导体公司之一。

*此信息仅供一般参考,对于因上述信息造成的任何损失或损害,我们概不负责。




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