STP21NM60ND 数据表(PDF)

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STP21NM60ND 数据表 (PDF) - STMicroelectronics

STP21NM60ND Datasheet PDF - STMicroelectronics


部件名	STP21NM60ND

下载	STP21NM60ND 下载

文件大小	559.02 Kbytes

页	18 Pages

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

功能描述	Low input capacitance and gate charge

STP21NM60ND Datasheet (PDF)

下载数据表


部件名	STP21NM60ND

下载	STP21NM60ND Click to download

文件大小	559.02 Kbytes

页	18 Pages

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

功能描述	Low input capacitance and gate charge

STP21NM60ND 数据表 (HTML) - STMicroelectronics

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STP21NM60ND Datasheet HTML 4Page - STMicroelectronics

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STP21NM60ND Datasheet HTML 8Page - STMicroelectronics

STP21NM60ND Datasheet HTML 9Page - STMicroelectronics

STP21NM60ND Datasheet HTML 10Page - STMicroelectronics

STP21NM60ND 产品详情

Description
The FDmesh™ II series belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body diode. It is therefore strongly recommended for bridge topologies, in ZVS phase-shift converters.

Features
■ The worldwide best RDS(on)*area amongst the fast recovery diode devices
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
■ Extremely high dv/dt and avalanche capabilities

Applications
■ Switching applications

类似零件编号 - STP21NM60ND

制造商	部件名	数据表	功能描述
STMicroelectronics	STP21NM60ND	545Kb / 18P	N-channel 600 V, 0.17 Ω, 17 A FDmesh??II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247 22-Apr-2008
STMicroelectronics	STP21NM60ND	559Kb / 18P	N-channel 600 V, 0.17 Ω, 17 A FDmesh??II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247 27-Mar-2009
Inchange Semiconductor ...	STP21NM60ND	291Kb / 2P	Isc N-Channel MOSFET Transistor

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类似说明 - STP21NM60ND

制造商	部件名	数据表	功能描述
STMicroelectronics	STB43N65M5	561Kb / 16P	Low gate charge and input capacitance 23-Jul-2015
	STB27NM60ND	940Kb / 19P	Low input capacitance and gate charge 31-Oct-2013
	STB7ANM60N	1Mb / 20P	Low input capacitance and gate charge 12-Dec-2013
	STL38N65M5	1Mb / 17P	Low input capacitance and gate charge 17-Jan-2013
	STD7NM64N	992Kb / 16P	Low input capacitance and gate charge 02-Aug-2013
	STE145N65M5	820Kb / 13P	Low gate charge and input capacitance 12-Nov-2015
	STY100NM60N	815Kb / 13P	Low input capacitance and gate charge 05-Nov-2012
	STB26NM60ND	1Mb / 23P	Low input capacitance and gate charge 28-Nov-2013
	STL3NM60N	865Kb / 13P	Low input capacitance and gate charge 19-Nov-2014
	STL15N65M5	1Mb / 16P	Low gate charge and input capacitance 05-Dec-2016

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关于 STMicroelectronics

Stmicroelectronics是位于瑞士日内瓦的跨国电子和半导体制造商。

该公司为汽车，工业和消费者市场的各种应用提供了广泛的产品，包括微控制器，传感器，功率放大器和集成电路。

Stmicroelectronics成立于1987年，在100多个国家 /地区开展业务，是世界上最大的半导体公司之一。

*此信息仅供一般参考，对于因上述信息造成的任何损失或损害，我们概不负责。

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