Description
These devices are N-channel Power MOSFETs developed using SuperMESH™ 5 technology. This revolutionary, avalanche-rugged, high voltage Power MOSFET technology is based on an innovative proprietary vertical structure. The result is a drastic reduction in on-resistance and ultra low gate charge for applications which require superior power density and high efficiency. TO-220 1 2 3 TAB 1 2 3 1 2 3 TO-220FP TO-247 D(2,TAB) G(1) S(3) AM01476v1

Features
■ TO-220 worldwide best RDS(on)
■ Worldwide best FOM (figure of merit)
■ Ultra low gate charge
■ 100% avalanche tested
■ Zener-protected

Applications
■ Switching applications