Description
This device is an IGBT developed using an
advanced proprietary trench gate field-stop
structure. The device is part of the S series of
1200 V IGBTs which is tailored to maximize
efficiency of low frequency industrial systems.
Furthermore, a positive VCE(sat) temperature
coefficient and tight parameter distribution result
in safer paralleling operation.

Features
• 10 µs of short-circuit withstand time
• VCE(sat) = 1.55 V (typ.) @ IC = 15 A
• Tight parameter distribution
• Safer paralleling
• Low thermal resistance
• Soft and fast recovery antiparallel diode

Applications
• Industrial drives
• UPS
• Solar
• Welding