Description
These IGBTs are developed using an advanced
proprietary trench gate field-stop structure and
performance is optimized in both conduction and
switching losses. A freewheeling diode with a low
drop forward voltage is co-packaged. The result is
a product specifically designed to maximize
efficiency for any resonant and soft-switching
application.

Features
• Designed for soft commutation only
• Maximum junction temperature: TJ = 175 °C
• Minimized tail current
• VCE(sat) = 2.0 V (typ.) @ IC = 25 A
• Tight parameters distribution
• Safe paralleling
• Low VF soft recovery co-packaged diode
• Low thermal resistance
• Lead free package

Applications
• Induction heating
• Microwave oven
• Resonant converters