Description
This ultrafast IGBT is developed using a new
planar technology to yield a device with tighter
switching energy variation (Eoff) versus
temperature. The suffix "W" denotes a subset of
products designed for high switching frequency
operation (over 100 kHz).

Features
■ Improved Eoff at elevated temperature
■ Low CRES / CIES ratio (no cross-conduction
susceptibility)
■ Low VF soft recovery antiparallel diode

Applications
■ Welding
■ Induction heating
■ Resonant converters