Description
This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. TO-247 TO-3P 1 2 3 1 2 3 TAB C (2 or TAB) G (1) E (3)

Features
■ Designed for soft commutation only
■ Maximum junction temperature: TJ = 175 °C
■ Tail-less switching off
■ VCE(sat) = 1.8 V (typ.) @ IC = 40 A
■ Tight parameters distribution
■ Safe paralleling
■ Low thermal resistance
■ Low VF soft recovery co-packaged diode

Applications
■ Induction heating
■ Microwave oven
■ Resonant converters