Description
This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Drain(1) Gate(4) Driver source(3) Power source(2) AM10177v1 TO247-4 1 234

Features
■ Higher VDS rating
■ Higher dv/dt capability
■ Excellent switching performance thanks to the extra driving source pin
■ Easy to drive
■ 100% avalanche tested

Applications
■ High efficiency switching applications: – Servers – PV inverters – Telecom infrastructure – Multi kW battery chargers