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SGA-8343X 数据表 (PDF) - Stanford Microdevices

SGA-8343X Datasheet PDF - Stanford Microdevices
部件名 SGA-8343X
下载  SGA-8343X 下载
文件大小   178.27 Kbytes
  9 Pages
制造商  STANFORD [Stanford Microdevices]
网页  
标志 STANFORD - Stanford Microdevices
功能描述 Reliability Qualification Report

SGA-8343X Datasheet (PDF)

Go To PDF Page 下载 数据表
SGA-8343X Datasheet PDF - Stanford Microdevices

部件名 SGA-8343X
下载  SGA-8343X Click to download

文件大小   178.27 Kbytes
  9 Pages
制造商  STANFORD [Stanford Microdevices]
网页  
标志 STANFORD - Stanford Microdevices
功能描述 Reliability Qualification Report

SGA-8343X 数据表 (HTML) - Stanford Microdevices


SGA-8343X 产品详情

Qualification Overview
The SGA-8343X family of products has demonstrated reliable operation by passing all qualification testing in our product qualification test plan. The “X’ designates a lead-free lead frame using Tin plated leads. The SGA-8343X has been subject to stresses such as humidity (autoclave), extreme hot and cold environments (temperature cycling), moisture sensitivity (MSL-1 and solder reflow testing), and has demonstrated reliable performance.

Introduction
Sirenza Microdevices’ SGA-8343X is a high performance Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) designed for operation from DC to 6 GHz. The SGA-8343X is optimized for 3V operation but can be biased at 2V for low voltage battery operated systems. The device provides high gain, low NF, and excellent linearity at a low cost. It can be operated at very low bias currents in applications where high linearity is not required.




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