PSMN028-100HS pdf, PSMN028-100HS 功能描述, PSMN028-100HS 数据表, PSMN028-100HS view ::: ALLDATASHEET :::

部件名	PSMN028-100HS

功能描述	N-channel 100 V, 27.5 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology

文件大小	276.82 Kbytes

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制造商	NEXPERIA [Nexperia B.V. All rights reserved]

网页	https://www.nexperia.com/

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类似零件编号 - PSMN028-100HS

制造商	部件名	数据表	功能描述
NXP Semiconductors	PSMN028-100YS	257Kb / 15P	N-channel LFPAK 100V 27.5 m廓 standard level MOSFET Rev. 02-30 March 2010
Nexperia B.V. All right...	PSMN028-100YS	817Kb / 15P	N-channel LFPAK 100V 27.5 mΩ standard level MOSFET Rev. 02 - 30 March 2010

制造商	部件名	数据表	功能描述
Nexperia B.V. All right...	PSMN013-60HS	281Kb / 12P	N-channel 60 V, 10 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology 26 September 2022
	PSMN014-60HS	336Kb / 12P	N-channel 60 V, 14 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology 26 September 2022
	PSMN025-100HS	277Kb / 12P	N-channel 100 V, 24.5 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology 26 September 2022
	PSMN029-100HL	303Kb / 12P	N-channel 100 V, 29 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology 26 September 2022
	PSMN033-100HL	337Kb / 12P	N-channel 100 V, 31 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology 30 September 2022
	PSMN038-100HS	281Kb / 12P	N-channel 100 V, 37.6 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology 26 September 2022
	PSMN045-100HL	297Kb / 12P	N-channel 100 V, 45 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology 26 September 2022
	PSMN6R8-40HS	286Kb / 12P	N-channel 40 V, 6.8 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology 19 October 2022
	PSMN8R5-40HS	341Kb / 12P	N-channel 40 V, 8.5 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology 26 September 2022
	PSMN9R3-60HS	325Kb / 12P	N-channel 60 V, 9.3 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology 26 September 2022