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部件名	PCI

功能描述	1.0 – 12.0 μm HgCdTe ambient temperature, optically immersed photoconductive detectors

文件大小	695.19 Kbytes

Html View	1 2

制造商	VIGO [VIGO Photonics S.A.]

网页	https://vigophotonics.com/us/

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制造商	部件名	数据表	功能描述
VIGO Photonics S.A.	PCI3TE12TO8-36-DTE	719Kb / 2P	2 – 14 μm HgCdTe three-stage thermoelectrically cooled, optically immersed photoconductive detector 25/09/2020
	PCI-2TE	797Kb / 2P	1.0 – 15.0 μm HgCdTe two-stage thermoelectrically cooled, optically immersed photoconductive detectors 08/11/2020
	PCI-3TE	774Kb / 2P	1.0 – 15.0 μm HgCdTe three-stage thermoelectrically cooled, optically immersed photoconductive detectors 08/11/2020
	PCI-4TE	774Kb / 2P	1.0 – 16.0 μm HgCdTe four-stage thermoelectrically cooled, optically immersed photoconductive detectors 25/05/2022
	PCQ	660Kb / 2P	1.0 – 12.0 μm HgCdTe ambient temperature photoconductive quadrant detector 19/02/2021
	PEM	737Kb / 2P	2.0 – 12.0 μm HgCdTe ambient temperature photoelectromagnetic detectors 09/11/2020
	PEMI	744Kb / 2P	2.0 – 12.0 μm HgCdTe ambient temperature, optically immersed photoelectromagnetic detectors 09/11/2020
	PVI	700Kb / 2P	2.5 – 6.5 μm HgCdTe ambient temperature, optically immersed photovoltaic detectors 25/09/2020
	PVIA	645Kb / 2P	2.4 – 5.3 μm InAs and InAsSb ambient temperature, optically immersed photovoltaic detectors 04/05/2022
	PVMI	699Kb / 2P	2 – 12 μm HgCdTe ambient temperature, optically immersed photovoltaic multiple junction detectors 25/09/2020