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部件名	PVA

功能描述	2.4 – 5.3 μm InAs and InAsSb ambient temperature photovoltaic detectors

文件大小	637.18 Kbytes

Html View	1 2

制造商	VIGO [VIGO Photonics S.A.]

网页	https://vigophotonics.com/us/

标志

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制造商	部件名	数据表	功能描述
Hamamatsu Corporation	P13243	225Kb / 4P	InAsSb photovoltaic detectors
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VIGO Photonics S.A.	PEM	737Kb / 2P	2.0 – 12.0 μm HgCdTe ambient temperature photoelectromagnetic detectors 09/11/2020
	PVA-2TE	695Kb / 2P	2.4 – 5.3 μm InAs and InAsSb two-stage thermoelectrically cooled photovoltaic detectors 04/05/2022
	PVI	700Kb / 2P	2.5 – 6.5 μm HgCdTe ambient temperature, optically immersed photovoltaic detectors 25/09/2020
	PV-SERIES	696Kb / 2P	2.5 – 6.5 μm HgCdTe ambient temperature photovoltaic detectors 17/11/2020
	PVIA-2TE	697Kb / 2P	2.4 – 5.3 μm InAs and InAsSb two-stage thermoelectrically cooled, optically immersed photovoltaic detectors 24/06/2022
	PVIA	645Kb / 2P	2.4 – 5.3 μm InAs and InAsSb ambient temperature, optically immersed photovoltaic detectors 04/05/2022
	PVM	695Kb / 2P	2.0 – 13.0 μm HgCdTe ambient temperature photovoltaic multiple junction detectors 09/11/2020
	PVMI	699Kb / 2P	2 – 12 μm HgCdTe ambient temperature, optically immersed photovoltaic multiple junction detectors 25/09/2020