| 制造商 | 部件名 | 数据表 | 功能描述 |
 NXP Semiconductors |
PDTC123JT
|
92Kb / 14P |
NPN resistor-equipped transistors; R1 = 2.2 kOHM, R2 = 47 kOHM
2004 Aug 13 |
|
PDTC123JT
|
948Kb / 12P |
Low VCEsat (BISS) transistors
May 2006 |
|
PDTC123JT
|
181Kb / 14P |
NPN resistor-equipped transistors; R1 = 2.2 k廓, R2 = 47 k廓
2004 Aug 13 |
 Nexperia B.V. All right... |
PDTC123JT
|
809Kb / 12P |
50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ
1 April 2023 |
|
PDTC123JT
|
1Mb / 18P |
PNP resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k
Rev. 5 - 21 December 2011 |