| 制造商 | 部件名 | 数据表 | 功能描述 |
 Infineon Technologies A... |
HYE18P16161AC
|
641Kb / 33P |
16M Asynchronous/Page CellularRAM
V2.0, December 2003 |
|
HYE18P32160AC
|
1Mb / 53P |
32M Synchronous Burst CellularRAM
V2.0, December 2003 |
 Samsung semiconductor |
KM23C64000T
|
71Kb / 4P |
64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM
|
|
K3S7V2000M-TC
|
1Mb / 27P |
64M-Bit (4Mx16 /2Mx32) Synchronous MASKROM
|
|
K3P7V1000
|
62Kb / 4P |
64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM
|
|
K1S64161CC
|
204Kb / 10P |
4Mx16 bit Page Mode Uni-Transistor Random Access Memory
|
|
K1S6416BCC
|
138Kb / 10P |
4Mx16 bit Page Mode Uni-Transistor Random Access Memory
|
 Emerging Memory & Logic... |
EMC646SP16K
|
507Kb / 52P |
4Mx16 bit CellularRAM AD-MUX
|
|
EMC326SP16AK
|
489Kb / 52P |
2Mx16 bit CellularRAM AD-MUX
|
|
EMC326SP16AJ
|
612Kb / 64P |
2Mx16 bit CellularRAM
|