| 制造商 | 部件名 | 数据表 | 功能描述 |
 Samsung semiconductor |
K4F661612B
|
844Kb / 35P |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode
|
|
K4F661612C
|
844Kb / 35P |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode
|
|
KM416C4000B
|
826Kb / 35P |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode
|
|
KM416C4000C
|
901Kb / 35P |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode
|
|
KM416V4000B
|
767Kb / 35P |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode
|
|
KM416V4000C
|
88Kb / 9P |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode
|
 Hynix Semiconductor |
HY51VS65163HG
|
96Kb / 11P |
4M x 16Bit EDO DRAM
|
 Samsung semiconductor |
K4F661612D
|
390Kb / 35P |
4M X 16BIT CMOS DYNAMIC RAM WITH FAST PAGE MODE
|
|
K4F661612E
|
386Kb / 35P |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode
|
 Emerging Memory & Logic... |
EM7323SU16H
|
129Kb / 11P |
2M x 16Bit Asynchronous / Page Mode StRAM
|