GT60M303 pdf, GT60M303 功能描述, GT60M303 数据表, GT60M303 view ::: ALLDATASHEET :::

部件名	GT60M303

功能描述	INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT

文件大小	426.72 Kbytes

Html View	1 2 3 4 5 6

制造商	TOSHIBA [Toshiba Semiconductor]

网页	http://www.semicon.toshiba.co.jp/eng

标志

类似零件编号 - GT60M303

制造商	部件名	数据表	功能描述
Toshiba Semiconductor	GT60M303	420Kb / 6P	HIGH POWER SWITCHING APPLICATIONS
	GT60M303	1Mb / 73P	Bipolar Small-Signal Transistors
	GT60M303-Q	420Kb / 6P	HIGH POWER SWITCHING APPLICATIONS
	GT60M303A	835Kb / 16P	Discrete IGBTs

制造商	部件名	数据表	功能描述
Toshiba Semiconductor	GT30J324	166Kb / 7P	Insulated Gate Bipolar Transistor Silicon N Channel IGBT
	GT40T301	311Kb / 6P	Insulated Gate Bipolar Transistor Silicon N Channel IGBT
	GT50G321	287Kb / 6P	TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
	GT8G132	338Kb / 6P	TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
	GT15Q311	172Kb / 7P	TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
	GT40G121	151Kb / 5P	TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
	GT60M323	193Kb / 6P	TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
	GT80J101B	69Kb / 6P	TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
	GT40T302	173Kb / 6P	Insulated Gate Bipolar Transistor Silicon N Channel IGBT
	GT60N321	173Kb / 6P	Insulated Gate Bipolar Transistor Silicon N Channel IGBT