PTF210451E pdf, PTF210451E 功能描述, PTF210451E 数据表, PTF210451E view ::: ALLDATASHEET :::

部件名	PTF210451E

功能描述	Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2010 ??2025 MHz and 2110 ??2170 MHz

文件大小	263.08 Kbytes

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制造商	INFINEON [Infineon Technologies AG]

网页	http://www.infineon.com

标志

类似零件编号 - PTF210451E

制造商	部件名	数据表	功能描述
Infineon Technologies A...	PTF210451E	406Kb / 8P	LDMOS RF Power Field Effect Transistor 45 W, 2110-2170 MHz 2003-12-22

制造商	部件名	数据表	功能描述
Infineon Technologies A...	PTFA212401E	495Kb / 11P	Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 ??2170 MHz Rev. 04, 2009-10-05
	PTFA212001E	402Kb / 11P	Thermally-Enhanced High Power RF LDMOS FETs 200 W, 2110 ??2170 MHz Rev. 05.1, 2009-02-24
	PTFA210701E	387Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 ??2170 MHz Rev. 02.1, 2009-02-18
	PTFB211501E	362Kb / 13P	Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 ??2170 MHz Rev. 02, 2009-11-19
	PTFA211801E	275Kb / 11P	Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 ??2170 MHz Rev. 04, 2007-11-15
	PTFA210601E	260Kb / 10P	Thermally-Enhanced High Power RF LDMOS FETs 60 W, 2110 ??2170 MHz Rev. 03, 2007-11-19
	PTFB211503EL	734Kb / 14P	Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 ??2170 MHz Rev. 04, 2011-03-07
	PTFB211803EL	477Kb / 14P	Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 ??2170 MHz Rev. 05, 2010-11-10
	PTFB212503EL	978Kb / 14P	Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110-2170 MHz Rev. 07, 2010-11-04
	PTFB212503EFL	830Kb / 14P	Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 ??2170 MHz Rev. 07.1, 2016-06-15