| 制造商 | 部件名 | 数据表 | 功能描述 |
 Toshiba Semiconductor |
1SS250
|
128Kb / 2P |
DIODE (HIGH SPEED SWITCHING APPLICATIONS)
|
|
1SS401
|
107Kb / 2P |
DIODE (HIGH SPEED SWITCHING APPLICATIONS)
|
|
1SS402
|
112Kb / 2P |
DIODE (HIGH SPEED SWITCHING APPLICATIONS)
|
 Sanyo Semicon Device |
FC801
|
43Kb / 2P |
Composite Diode for High-Speed Switching Applications
|
|
FC807
|
46Kb / 2P |
High-Speed Switching Composite Diode Anode Common
|
|
FC808
|
47Kb / 2P |
High-Speed Switching Composite Diode Cathode Common
|
|
FC903
|
21Kb / 2P |
High-Speed Switching Composite Diode
|
 Siemens Semiconductor G... |
BAS16W
|
67Kb / 4P |
Silicon Switching Diode (For high speed switching applications)
|
 Infineon Technologies A... |
BAV99E6327
|
171Kb / 13P |
For high-speed switching applications
2007-09-19 |
|
BAV99S-E6327
|
171Kb / 13P |
For high-speed switching applications
2007-09-19 |