| 制造商 | 部件名 | 数据表 | 功能描述 |
 Infineon Technologies A... |
BCR400
|
94Kb / 3P |
Application Considerations for the Integrated Bias Control Circuits
2000-07-27 |
 Toshiba Semiconductor |
TW015N65C
|
523Kb / 10P |
MOSFETs Silicon Carbide N-Channel MOS
2022-06-15 Rev.1.0 |
|
TW015N120C
|
528Kb / 10P |
MOSFETs Silicon Carbide N-Channel MOS
2022-06-15 Rev.2.0 |
|
TW027N65C
|
527Kb / 10P |
MOSFETs Silicon Carbide N-Channel MOS
2022-06-15 Rev.1.0 |
|
TW030N120C
|
525Kb / 10P |
MOSFETs Silicon Carbide N-Channel MOS
2022-06-15 Rev.2.0 |
|
TW045N120C
|
520Kb / 10P |
MOSFETs Silicon Carbide N-Channel MOS
2022-06-15 Rev.1.0 |
|
TW048N65C
|
521Kb / 10P |
MOSFETs Silicon Carbide N-Channel MOS
2022-06-15 Rev.1.0 |
|
TW060N120C
|
521Kb / 10P |
MOSFETs Silicon Carbide N-Channel MOS
2022-06-15 Rev.1.0 |
|
TW083N65C
|
850Kb / 10P |
MOSFETs Silicon Carbide N-Channel MOS
2022-06-16 Rev.1.0 |
|
TW107N65C
|
848Kb / 10P |
MOSFETs Silicon Carbide N-Channel MOS
2022-06-17 Rev.1.0 |