MRF151G pdf, MRF151G 功能描述, MRF151G 数据表, MRF151G view ::: ALLDATASHEET :::

部件名	MRF151G

功能描述	RF Power Field-Effect Transistor 300 W, 50 V, 175 MHz N-Channel Broadband MOSFET

文件大小	405.0 Kbytes

Html View	1 2 3 4 5 6 7 8 9

制造商	MA-COM [M/A-COM Technology Solutions, Inc.]

网页	http://www.macomtech.com

标志

类似零件编号 - MRF151G

制造商	部件名	数据表	功能描述
Motorola, Inc	MRF151G	156Kb / 6P	N-CHANNEL BROADBAND RF POWER MOSFET
Tyco Electronics	MRF151G	250Kb / 9P	N-CHANNEL BROADBAND RF POWER MOSFET
M/A-COM Technology Solu...	MRF151G	405Kb / 9P	RF Power Field-Effect Transistor 300 W, 50 V, 175 MHz N-Channel Broadband MOSFET
Advanced Semiconductor	MRF151G	21Kb / 1P	RF FIELD-EFFECT POWER TRANSISTOR
M/A-COM Technology Solu...	MRF151G	405Kb / 9P	RF Power Field-Effect Transistor

制造商	部件名	数据表	功能描述
Ericsson	PTF10015	221Kb / 6P	50 Watts, 300-960 MHz GOLDMOS Field Effect Transistor
Motorola, Inc	MRF9060	393Kb / 12P	945 MHz, 60 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
M/A-COM Technology Solu...	MRF151	350Kb / 8P	RF Power Field-Effect Transistor 150 W, 50 V, 175 MHz N-Channel Broadband MOSFET
	MRF151A	351Kb / 8P	RF Power Field-Effect Transistor 150W, 50V, 175MHz N-Channel Broadband MOSFET
	MRF151G	405Kb / 9P	RF Power Field-Effect Transistor 300 W, 50 V, 175 MHz N-Channel Broadband MOSFET
Infineon Technologies A...	PTFB213004F	674Kb / 16P	High Power RF LDMOS Field Effect Transistor 300 W, 2110-2170 MHz Rev. 05.2, 2010-12-09
M/A-COM Technology Solu...	MRF151A	351Kb / 8P	RF Power Field-Effect Transistor 150W, 50V, 175MHz N-Channel Broadband MOSFET
Infineon Technologies A...	PTFB213004F	740Kb / 16P	High Power RF LDMOS Field Effect Transistor 300 W, 2110 ??2170 MHz Rev. 05.3, 2016-06-15
Cree, Inc	PTFB213004F	528Kb / 16P	High Power RF LDMOS Field Effect Transistor 300 W, 2110 ??2170 MHz
Microchip Technology	VRF2933	438Kb / 14P	50 V, 300 W, 150 MHz RF Power MOSFET Rev. A - 02/2022