RC2012F510CS pdf, RC2012F510CS 功能描述, RC2012F510CS 数据表, RC2012F510CS view ::: ALLDATASHEET :::

部件名	RC2012F510CS

功能描述	Owing to the reduced lead inductance, the high frequency characteristic is excellent.

文件大小	791.37 Kbytes

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制造商	SAMSUNG [Samsung semiconductor]

网页	http://www.samsung.com/Products/Semiconductor

标志

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制造商	部件名	数据表	功能描述
ice Components, Ins.	IN08034	37Kb / 2P	Isat is the current at which the inductance drops by 15%.
	IN08035	37Kb / 2P	Isat is the current at which the inductance drops by 15%.
	IN08052	37Kb / 2P	Isat is the current at which the inductance drops by 15%.
	IN08070	56Kb / 2P	Isat is the current at which the inductance drops by 20%.
	IN08106	37Kb / 2P	Isat is the current at which the inductance drops by 20%.
	IN08124	35Kb / 2P	Isat is the current at which the inductance drops by 20%.
	IN08127	37Kb / 2P	Isat is the current at which the inductance drops by 15%.
	IN08137	36Kb / 2P	Isat is the current at which the inductance drops by 20%.
	IN08144	35Kb / 2P	Isat is the current at which the inductance drops by 20%.
	IN09004	36Kb / 2P	Isat is the current at which the inductance drops by 15%.