RMQCBA3636DGBA pdf, RMQCBA3636DGBA 功能描述, RMQCBA3636DGBA 数据表, RMQCBA3636DGBA view ::: ALLDATASHEET :::

部件名	RMQCBA3636DGBA

功能描述	36-Mbit DDR??II SRAM 2-word Burst Architecture (2.5 Cycle Read latency)

文件大小	849.61 Kbytes

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制造商	RENESAS [Renesas Technology Corp]

网页	http://www.renesas.com

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类似零件编号 - RMQCBA3636DGBA

制造商	部件名	数据表	功能描述
Renesas Technology Corp	RMQC4A1818DGBA	855Kb / 30P	18-Mbit DDR™ II SRAM 2-word Burst Jan. 13, 2015
	RMQC4A1818DGBA-302#AC0	855Kb / 30P	18-Mbit DDR??II SRAM 2-word Burst
	RMQC4A1818DGBA-332#AC0	855Kb / 30P	18-Mbit DDR??II SRAM 2-word Burst
	RMQC4A1836DGBA	855Kb / 30P	18-Mbit DDR™ II SRAM 2-word Burst Jan. 13, 2015
	RMQC4A1836DGBA-302#AC0	855Kb / 30P	18-Mbit DDR??II SRAM 2-word Burst

制造商	部件名	数据表	功能描述
Cypress Semiconductor	CY7C1166V18	1Mb / 27P	18-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency)
	CY7C1246V18	1Mb / 27P	36-Mbit DDR-II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)
	CY7C1266V18	1Mb / 27P	36-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency)
	CY7C1566V18	1Mb / 27P	72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency)
	CY7C1566KV18	921Kb / 31P	72-Mbit DDR II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency)
	CY7C1246KV18	913Kb / 28P	36-Mbit DDR II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)
	CY7C1268KV18	871Kb / 28P	36-Mbit DDR II SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency)
Renesas Technology Corp	RMQCEA3636DGBA	887Kb / 31P	36-Mbit DDR??II SRAM 2-word Burst Architecture (2.5 Cycle Read latency) with ODT
Renesas Technology Corp	RMQCHA3636DGBA	846Kb / 30P	36-Mbit DDR??II SRAM 2-word Burst Architecture (2.0 Cycle Read latency)
Cypress Semiconductor	CY7C12661KV18	903Kb / 30P	36-Mbit DDR II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency)