| 制造商 | 部件名 | 数据表 | 功能描述 |
 International Rectifier |
IRF7663PBF
|
151Kb / 7P |
Trench Technology, Ultra Low On-Resistance, P-Channel MOSFET
|
 STMicroelectronics |
AN4406
|
658Kb / 27P |
new ST super-junction technology ideal for resonant topologies
30-Mar-2015 |
 Leshan Radio Company |
LDP4098T1G
|
335Kb / 5P |
Dual P-Channel MOSFET Low RDS(on) trench technology.
|
|
LDP4953T1G
|
331Kb / 5P |
Dual P-Channel MOSFET Low RDS(on) trench technology.
|
|
LP4935T1G
|
385Kb / 5P |
P-Channel MOSFET Low RDS(on) trench technology.
|
 SHENZHEN DOINGTER SEMIC... |
RU30L15H
|
2Mb / 7P |
P-Channel MOSFET uses advanced trench technology
|
|
SM4310PSK
|
1Mb / 4P |
P-Channel MOSFET uses advanced trench technology
|
|
SM4403PSK
|
1Mb / 4P |
P-Channel MOSFET uses advanced trench technology
|
|
SPP4435B
|
1Mb / 4P |
P-Channel MOSFET uses advanced trench technology
|
|
SSG4841P
|
1Mb / 4P |
P-Channel MOSFET uses advanced trench technology
|