MJD112 pdf, MJD112 功能描述, MJD112 数据表, MJD112 view ::: ALLDATASHEET :::

部件名	MJD112

功能描述	EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)

文件大小	394.6 Kbytes

Html View	1 2

制造商	KEC [KEC(Korea Electronics)]

网页	http://www.keccorp.com

标志

类似零件编号 - MJD112

制造商	部件名	数据表	功能描述
Motorola, Inc	MJD112	306Kb / 6P	SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS
ON Semiconductor	MJD112	147Kb / 8P	Complementary Darlington Power Transistors August, 2004 ??Rev. 5
STMicroelectronics	MJD112	84Kb / 6P	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS Sep-1997
Fairchild Semiconductor	MJD112	51Kb / 5P	D-PAK for Surface Mount Applications
ON Semiconductor	MJD112	101Kb / 8P	Complementary Darlington Power Transistors January, 2006 ??Rev. 7

制造商	部件名	数据表	功能描述
Fairchild Semiconductor	TIP105	50Kb / 4P	Monolithic Construction With Built In Base- Emitter Shunt Resistors
KEC(Korea Electronics)	MJD117	394Kb / 2P	EPITAXIAL PLANAR PNP TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)
	TIP112	74Kb / 2P	EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)
	TIP112F	41Kb / 2P	EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)
	TIP117	75Kb / 2P	EPITAXIAL PLANAR PNP TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)
	TIP117F	42Kb / 2P	EPITAXIAL PLANAR PNP TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)
SemiHow Co.,Ltd.	TIP100	744Kb / 5P	Monolithic Construction With Built In Base-Emitter Shunt Resistors
	TIP125	510Kb / 5P	Monolithic Construction With Built In Base-Emitter Shunt Resistors
	TIP106	750Kb / 5P	Monolithic Construction With Built In Base-Emitter Shunt Resistors
TAI-SAW TECHNOLOGY CO.,...	TIP140T	574Kb / 5P	Monolithic Construction With Built In Base-Emitter Shunt Resistors