| 制造商 | 部件名 | 数据表 | 功能描述 |
 Motorola, Inc |
MTH8N50E
|
631Kb / 6P |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
|
 ON Semiconductor |
MTB10N40E
|
282Kb / 11P |
High Energy Power FET
August, 2006 ??Rev. 1 |
|
MTB16N25E
|
280Kb / 11P |
High Energy Power FET
August, 2006 ??Rev. 1 |
|
MTB3N100E
|
285Kb / 11P |
High Energy Power FET
August, 2006 ??Rev. 3 |
|
MTP3N60E
|
235Kb / 8P |
High Energy Power FET
August, 2006 ??Rev. 3 |
|
MTB9N25E
|
293Kb / 12P |
High Energy Power FET
August, 2006 ??Rev. 1 |
|
MTB3N60E
|
146Kb / 4P |
High Energy Power FET
August, 2006 ??Rev. 1 |
|
MMFT2N25E
|
142Kb / 6P |
High Energy Power FET
May, 2013 ??Rev. 2 |
|
MTB2N60E
|
269Kb / 10P |
High Energy Power FET
August, 2006 ??Rev. 1 |
 New Jersey Semi-Conduct... |
MTP4N50E
|
171Kb / 2P |
High Energy Power FET
|