PTF080601 pdf, PTF080601 功能描述, PTF080601 数据表, PTF080601 view ::: ALLDATASHEET :::

部件名	PTF080601

功能描述	LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz

文件大小	293.73 Kbytes

Html View	1 2 3 4 5 6

制造商	INFINEON [Infineon Technologies AG]

网页	http://www.infineon.com

标志

类似零件编号 - PTF080601

制造商	部件名	数据表	功能描述
Infineon Technologies A...	PTF080101	64Kb / 4P	LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W, 860-960MHZ 2004-03-08
	PTF080101M	258Kb / 8P	High Power RF LDMOS Field Effect Transistor 10 W, 450 ??960 MHz Rev. 02.1, 2009-02-18
	PTF080101S	64Kb / 4P	LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W, 860-960MHZ 2004-03-08
	PTF080101S	172Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 10 W, 860 - 960 MHz 2004-10-05
	PTF080451	158Kb / 9P	LDMOS RF Power Field Effect Transistor 45 W, 869-960 MHz 2004-06-24

制造商	部件名	数据表	功能描述
Ericsson	PTF10138	106Kb / 6P	60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor
Ericsson	PTF10139	115Kb / 6P	60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor
Infineon Technologies A...	PTF080451	158Kb / 9P	LDMOS RF Power Field Effect Transistor 45 W, 869-960 MHz 2004-06-24
Infineon Technologies A...	PTF080901	205Kb / 10P	LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz 2004-04-05
Tyco Electronics	MAPLST0810-045CF	136Kb / 4P	RF Power Field Effect Transistor LDMOS, 865 - 960 MHz, 45W, 26V
	MAPLST0810-090CF	138Kb / 4P	RF Power Field Effect Transistor LDMOS, 865 - 960 MHz, 90W, 26V
	MAPLST0810-030CF-05-2004	137Kb / 4P	RF Power Field Effect Transistor LDMOS, 865 - 960 MHz, 30W, 26V
	MAPLST0810-045CF	136Kb / 4P	RF Power Field Effect Transistor LDMOS, 865 - 960 MHz, 45W, 26V
	MAPLST0810-090CF-05-2004	138Kb / 4P	RF Power Field Effect Transistor LDMOS, 865 - 960 MHz, 90W, 26V
Infineon Technologies A...	PTF080101M	258Kb / 8P	High Power RF LDMOS Field Effect Transistor 10 W, 450 ??960 MHz Rev. 02.1, 2009-02-18