PTF191601 pdf, PTF191601 功能描述, PTF191601 数据表, PTF191601 view ::: ALLDATASHEET :::

部件名	PTF191601

功能描述	LDMOS RF Power Field Effect Transistor 160 W, 1930-1990 MHz

文件大小	61.2 Kbytes

Html View	1 2 3 4

制造商	INFINEON [Infineon Technologies AG]

网页	http://www.infineon.com

标志

类似零件编号 - PTF191601

制造商	部件名	数据表	功能描述
Infineon Technologies A...	PTF191601E	206Kb / 10P	Thermally-Enhnaced High Power RF LDMOS FETs 160 W, 1930-1990 MHz 2004-09-16
Infineon Technologies A...	PTF191601F	206Kb / 10P	Thermally-Enhnaced High Power RF LDMOS FETs 160 W, 1930-1990 MHz 2004-09-16

制造商	部件名	数据表	功能描述
Infineon Technologies A...	PTF180101	310Kb / 10P	LDMOS RF Power Field Effect Transistor 10 W, 1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz 2004-02-03
Infineon Technologies A...	PTF180601	233Kb / 11P	LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805-1880 MHz, 1930-1990 MHz 2004-05-03
TriQuint Semiconductor	AGR19045EF	331Kb / 10P	45 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor
	AGR19030EF	355Kb / 10P	30 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor
	AGR19060E	412Kb / 10P	60 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor
	AGR19090E	395Kb / 10P	90 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor
	AGR19125E	395Kb / 10P	125 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor
	AGR19180EF	438Kb / 9P	180 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor
Infineon Technologies A...	PTF180101S	209Kb / 10P	LDMOS RF Power Field Effect Transistor 10 W, 1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz Rev. P03, 2007-03-01
Infineon Technologies A...	PTF191601F	206Kb / 10P	Thermally-Enhnaced High Power RF LDMOS FETs 160 W, 1930-1990 MHz 2004-09-16