GS4288C09 pdf, GS4288C09 功能描述, GS4288C09 数据表, GS4288C09 view ::: ALLDATASHEET :::

部件名	GS4288C09

功能描述	32M x 9, 16M x 18, 8M x 36 288Mb CIO Low Latency DRAM (LLDRAM) II

文件大小	2386.19 Kbytes

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制造商	GSI [GSI Technology]

网页	http://www.gsitechnology.com

标志

类似零件编号 - GS4288C09

制造商	部件名	数据表	功能描述
EUROQUARTZ limited	GS42	96Kb / 1P	11.4 x 9.6 x 2.5mm SMD Sine Wave VCXO
GTM CORPORATION	GS420SD	163Kb / 2P	SURFACE MOUNT SCHOTTKY BARRIER DIODE
E-Tech Electronics LTD	GS420SD	169Kb / 2P	S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E V O L T A G E 4 0 V, C U R R E N T 0 . 1 A
GTM CORPORATION	GS421SD	150Kb / 2P	SURFACE MOUNT SCHOTTKY BARRIER DIODE
E-Tech Electronics LTD	GS421SD	155Kb / 2P	S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E V O L T A G E 4 0 V, C U R R E N T 0 . 1 A

制造商	部件名	数据表	功能描述
Micron Technology	MT49H8M36	1Mb / 49P	288Mb CIO Reduced Latency
Integrated Silicon Solu...	IS42S81600E	934Kb / 61P	16M x 8, 8M x16 128Mb SYNCHRONOUS DRAM
Integrated Silicon Solu...	IS45S81600E	870Kb / 61P	16M x 8, 8M x16 128Mb SYNCHRONOUS DRAM
GSI Technology	GS4576C09	2Mb / 62P	64M x 9, 32M x 18, 16M x 36 576Mb CIO Low Latency DRAM (LLDRAM II)
	GS4576C36GL-25I	2Mb / 63P	576Mb CIO Low Latency DRAM (LLDRAM II)
	GS8256418GB-250I	431Kb / 35P	16M x 18, 8M x 36 288Mb DCD Sync Burst SRAMs
	GS8256418GD-250I	431Kb / 35P	16M x 18, 8M x 36 288Mb DCD Sync Burst SRAMs
	GS8256436GB-200IV	422Kb / 33P	16M x 18, 8M x 36 288Mb DCD Sync Burst SRAMs
	GS8256436GD-200IV	422Kb / 33P	16M x 18, 8M x 36 288Mb DCD Sync Burst SRAMs
	GS8256436GD-250I	431Kb / 35P	16M x 18, 8M x 36 288Mb DCD Sync Burst SRAMs